Wafer Bonder - EVG 501

This bonding system can be used for all wafer bonding processes such as anodic, thermo compression and silicon direct bonding.

Specifications :

  • Top & Bottom side heaters up to 550 º C

  • Voltage: Max. 0-2 KV

  • Adjustable contact force up to 3.5KN with a resolution of 3.5N

  • Bond Current Range: 0-50 mA with a resolution of 200µA.

  • Available Bonding Processes: Anodic, thermo compression & silicon direct bonding.

Process Capabilities:

  • Substrates Used: Silicon, glass

  • Substrate Size: 2”, 4”

  • Gases Used: GN2

wafer bonder