Dielectric Sputter System (Advanced Processing Technology)

Purposes: To perform thin film deposition of dielectric materials

Process Capabilities:

  • Wafer size: 2 Inch

  • Dielectric targets: Hafnium Oxide, Silicon Oxide, Tantalum Oxide

  • Gases Involved: Argon, Oxygen, Nitrogen

  • Base pressure: 2 X 10-6 mbar

  • Operating pressure: 0.015 – 0.023 mbar

  • Substrate temperature: Room temperature

  • Target Size: 125 mm (diameter)

  • Sputtering Distance: 13 cm

  • Two RF power supplies with matching networks

  • RF matching can be manual or Auto

 

 

 

 

 

 sputter

Sputter Target Details:

  • Target Shape: Circular Disk

  • Diameter: 125 mm

  • Thickness of the target: 1mm - 5mm
    (as per requirement)

  • Backing plate: Copper backing plate

  • Bonding of backing plate
       with target    : Indium Metallic Bonding
    (Indium metallic bonding is must for copper backing plate)